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| 2SK1968 Silicon N-Channel MOS FET Application High speed power switching Features * * * * * Low on-resistance High speed switching No secondary breakdown Suitable for Switching regulator Low drive current Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1968 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW 10 s, duty cycle 1 % 2. Value at Tc = 25C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 600 30 12 48 12 100 150 -55 to +150 Unit V V A A A W C C 2 2SK1968 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 600 30 -- -- 2.0 -- 5 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.68 10 1800 400 60 25 70 145 65 1.1 670 Max -- -- 10 250 3.0 0.88 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns V ns I F = 12 A, VGS = 0 I F = 12 A, VGS = 0, diF / dt = 100 A / s Test conditions I D = 10 mA, VGS = 0 I G = 100 A, VDS = 0 VGS = 25 V, VDS = 0 VDS = 500 V, VGS = 0 I D = 1 mA, VDS = 10 V ID = 6 A VGS = 10 V*1 ID = 6 A VDS = 10 V*1 VDS = 10 V VGS = 0 f = 1 MHz ID = 6 A VGS = 10 V RL = 5 Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse Test VGS(off) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 3 2SK1968 Power vs. Temperature Derating 200 Pch (W) Maximum Safe Operation Area 100 30 10 10 10 0 s 150 (A) s Power Dissipation 100 50 Drain Current 1m DC PW s Op = 1 0 er at ms( 3 ion 1 (T sho c = t) Operation in this area 1 is limited by R 25 DS(on) C ) ID 0.3 0.1 5 Ta = 25C 10 30 100 Drain to Source Voltage 300 1000 V DS (V) 0 50 100 Case Temperature 150 Tc (C) 200 Typical Output Characteristics 20 10 V (A) 16 6V 5V Pulse test (A) Typical Transfer Characteristics 20 Pulse test VDS = 20 V 16 ID ID Drain Current 12 4.5 V 8 12 Tc = 75C 8 25C -25C 4 Drain Current 4 VGS = 4 V 0 10 20 30 Drain to Source Voltage 40 50 V DS (V) 0 2 4 6 8 10 Gate to Source Voltage V GS (V) 4 2SK1968 Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage V DS(on) (V) 20 Pulse test Static Drain to Source on State Resistance vs. Drain Current 5 16 15 A 12 Static Drain to Source on State Resistance R DS(on) ( ) 2 1 0.5 VGS = 10 V 8 10 A ID=5A 4 0.2 Pulse test 0.1 1 2 5 10 Drain Current 20 50 I D (A) 100 0 4 8 12 16 20 Gate to Source Voltage V GS (V) Static Drain to Source on State Resistance R DS(on) ( ) Static Drain to Source on State Resistance vs. Temperature Pulse test VGS = 10 V 1.6 Forward Transfer Admittance |y fs | (S) 2.0 50 Forward Transfer Admittance vs. Drain Current Pulse test V DS = 20 V 20 10 5 Tc = -25C 25C 75C 1.2 10 A 0.8 ID = 5 A 2 1 0.5 0.1 0.2 0.4 0 -40 0 40 80 120 160 Gate to Source Voltage V GS (V) 0.5 1 2 5 10 Drain Current I D (A) 20 5 2SK1968 Body to Drain Diode Reverse Recovery Time 3000 t rr (ns) 2000 (pF) di/dt = 100 A/s V GS = 0, Ta = 25C 5000 2000 1000 500 200 100 50 20 100 0.1 0.2 0.5 1 2 Reverse Drain Current 5 10 20 I DR (A) 10 0 Crss 10 20 30 Drain to Source Voltage 40 50 V DS (V) VGS = 0 f = 1 MHz Coss Ciss Typical Capacitance vs. Drain to Source Voltage Reverse Recovery Time 500 200 Capacitance C 1000 Dynamic Input Characteristics 1000 V DS (V) VGS 16 V GS (V) I D = 12 A VDD = 100 V 250 V 400 V 20 300 200 (ns) Switching Characteristics 800 td(off) Gate to Source Voltage Drain to Source Voltage 600 VDS 12 Switching Time t 100 tf tr 20 10 0.1 0.2 VGS = 10 V, PW = 5 s duty 1 %, VDD 30 V 0.5 1 2 5 10 Drain Current I D (A) 20 td(on) 50 400 8 VDD = 400 V 250 V 100 V 20 40 Gate Charge 60 Qg 80 (nc) 200 4 0 100 0 6 2SK1968 Reverse Drain Current vs. Source to Drain Voltage 20 I DR (A) Reverse Drain Current Pulse test 16 12 VGS = 0, -5 V 10 V 8 4 0 0.4 0.8 1.2 Source to Drain Voltage 1.6 2.0 V SD (V) Normal Transient Thermal Impedance vs. Pusle Width 3 Normalized Transient Thermal Impedance s (t) 1 D=1 0.5 0.2 0.1 0.3 0.1 0.05 0.02 1 0.0 ch - c(t) = s (t) * ch - c ch - c = 1.25 C/W, Tc = 25 C PDM D= PW T 0.03 1s t ho Pu lse PW T 0.01 10 100 1m 10 m Pulse Width 100 m PW (S) 1 10 7 2SK1968 Switching Time Test Circuit and Waveform 90% Vin Monitor D.U.T. RL Vout Vin 10 V 50 V DD = 30 V t d(on) 10% 10% Vout Monitor Vin 10% 90% tr 90% t d(off) tf 8 Unit: mm 5.0 0.3 15.6 0.3 1.0 3.2 0.2 4.8 0.2 1.5 0.5 14.9 0.2 19.9 0.2 1.6 1.4 Max 2.0 2.8 18.0 0.5 1.0 0.2 2.0 0.6 0.2 3.6 0.9 1.0 5.45 0.5 5.45 0.5 Hitachi Code JEDEC EIAJ Weight (reference value) TO-3P -- Conforms 5.0 g 0.3 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. |
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